The difference between 9610A and 9612:
9610A can measure three parameters: A:, breakdown voltage, VDSS, turn-on voltage, VGS, Gfs transconductance
B: three parameters can only be measured by one item and one item
9612, you can measure three parameters: A: open voltage, VGS Gfs transconductance, through state resistor Ron, interelectrode capacitor Cir, four parameters together to measure
B: is efficient,
C: belt sorting alarm, suitable for large quantity incoming inspection
I. overview
Type JK9610A power FET tester is a novel all digital display type power FET parameter test device, can be used for the nominal current of about 2-85A,Test of main parameters of N channel power field effect tube with less than 300W power.It can accurately measure the breakdown voltage VDSS, the gate open voltage VGS (th) and the amplification characteristic parameter transconductance Gfs, especially the transconductance Gfs test current can reach 50A, because the pulse current test method is adopted,Even in high current test, it will not cause any damage to the device under test, and can also test the parameter conformance of the field effect transistor under the condition of large current;The instrument can be used for the measurement of IGBT parameters at the same current level;The instrument is also an electronic component withstanding voltage test device with very good performance,Its test when the leakage current pressure 1mA, 250uA, 25uA, three blocks can be selected.The instrument is mainly used for the quality inspection of power field effect transistors and IGBT, the matching of parameters and the withstanding voltage test of other electronic components.The instrument is divided into two kinds of N channel guide type test instrument and P channel guide type tester. The utility model has the advantages of beautiful appearance, stable performance, accurate measurement, simple operation and convenient and safe use.
Two, the main technical performance
1, the breakdown voltage of VDSS measuring range: 0 - 1999V, accuracy: less than 2.5%.
2, IDSS can be divided into three blocks: 1mA, 250uA, 25uA.
3, gate open voltage VGS (th) measurement range: 0 - 10V. Accuracy: less than 5%.
4, Gfs transconductance test current Idm: not less than 1 - 50 A continuously adjustable accuracy: less than 10%.
5, Gfs transconductance test range: 1 - 100.
Three, the main test function
1. Test of breakdown voltage VDSS, gate open voltage VGS (th) and transconductance Gfs of power field effect transistor.
2, IGBT breakdown voltage V (BR) ces, gate open voltage VGE (th), transconductance Gfs test.
3 、 conformance test of power field effect transistors and IGBT in any current condition below 50A, which can be used for pairing.
4. Tests for other current and power MOSFET and IGBT: (see below).
5. Testing of breakdown voltage of various kinds of crystal triode, diode and regulator tube.
6 、 varistor voltage test, etc.
Four 、 test box and test line
1, the use of test box can easily test TO-126, TO-220, TOP-3 and other similar packaging power MOSFET and IGBT.
2, the use of test line can measure other metal, module and other forms of packaging power field effect tube and IGBT.
Test example
Model
|
|
breakdown voltage
Vdss
|
Turn-on voltage
Vgs(th)
|
transconductance S
Gfs
|
Gfs
Test current
|
Nominal current
ID
|
Nominal power
PD
|
encapsulation
|
IRF640
|
Basic parameter
|
200V
|
2-4V
|
≥6.8
|
11A
|
18A
|
150W
|
TO-220
|
|
Actual measurement parameter
|
225V
|
3.0V
|
12
|
11A
|
|
|
|
IRF1010
|
Bscic parameter
|
60V
|
2-4V
|
≥69
|
50A
|
84A
|
200W
|
TO-220
|
|
Actual measurement parameter
|
66V
|
3.2V
|
67
|
50A
|
|
|
|
IRF3205
|
Bscic parameter
|
55V
|
2-4V
|
≥44
|
62A
|
110A
|
200W
|
TO-220
|
|
Actual measurement parameter
|
60V
|
2.9V
|
68
|
60A
|
|
|
|
FQP70N08
|
Bscic parameter
|
80V
|
2-4V
|
41
|
35A
|
70A
|
155W
|
TO-220
|
|
Actual measurement parameter
|
86V
|
3.2V
|
46
|
35A
|
|
|
|
75NF75
|
Bscic parameter
|
75V
|
2-4V
|
20
|
40A
|
80A
|
300W
|
TO-220
|
|
Actual measurement parameter
|
81V
|
3.6V
|
52
|
40A
|
|
|
|
IRFP064
|
Bscic parameter
|
55V
|
2-4V
|
≥42
|
59A
|
110A
|
200W
|
TO-3P
|
|
Actual measurement parameter
|
67V
|
2.5V
|
57
|
60A
|
|
|
|
2SK1120
|
Bscic parameter
|
1000V
|
2.5-5V
|
4
|
4A
|
8A
|
150W
|
TO-3P
|
|
Actual measurement parameter
|
1086V
|
2.3V
|
5
|
4A
|
|
|
|
G160N60
|
Bscic parameter
|
600V
|
3.5-6.5V
|
*
|
80A
|
160A
|
250W
|
TO-247
|
|
Actual measurement parameter
|
626V
|
3.9V
|
35
|
60A
|
|
|
|
H40T120
|
Bscic parameter
|
1200V
|
5-6.5V
|
21
|
40A
|
75A
|
270W
|
TO-247
|
|
Actual measurement parameter
|
1390V
|
5.7V
|
20
|
40A
|
|
|
|
60N170D
|
Bscic parameter
|
1700V
|
3.5-7.5V
|
|
|
60A
|
200W
|
TO-247
|
|
Actual measurement parameter
|
1798V
|
4.8V
|
30
|
60A
|
|
|
|